2N2857+JAN
Bipolar NPN UHF-Microwave Transisitor

From Defense Supply Center Columbus

@Freq. (Hz) (Test Condition)140k
@I(C) (A) (Test Condition)1.5m
@V(CBO) (V) (Test Condition)15
@V(CE) (V) (Test Condition)6.0
Absolute Max. Power Diss. (W)200m
C(obo) (Max) (F)1.0p
I(C) Abs.(A) Collector Current40m
I(CBO) Max. (A)10n
Mil NumberJAN2N2857
MilitaryY
Noise Figure Max. (dB)4.5
PackageTO-72
Power Gain Min. (dB)13
Semiconductor MaterialSilicon
V(BR)CBO (V)30
V(BR)CEO (V)15
f(T) Min. (Hz) Transition Freq200M
h(FE) Max. Current gain.150
h(FE) Min. Static Current Gain30

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