2N6300+JAN
NPN Darlington Transistor

From Defense Supply Center Columbus

@I(B) (A) (Test Condition)80m
@I(C) (A) (Test Condition)8.0
@V(CBO) (V) (Test Condition)60
@V(CE) (V) (Test Condition)3.0
Absolute Max. Power Diss. (W)75
I(C) Abs.(A) Collector Current8.0
I(CBO) Max. (A)500u
Mil NumberJAN2N6300
MilitaryY
PackageTO-66
Semiconductor MaterialSilicon
V(BR)CBO (V)60
V(BR)CEO (V)60
V(CE)sat Max.(V)3.0
f(T) Min. (Hz) Transition Freq4.0M
h(FE) Max. Current gain.18k
h(FE) Min. Static Current Gain750

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