N-Channel Enhancement MOSFET

From Defense Supply Center Columbus

Absolute Max. Power Diss. (W) 6.25
C(iss) Max. (F) 50p
g(fs) Max, (S) Trans. conduct, 195m
g(fs) Min. (S) Trans. conduct. 170m
I(D) Abs. Drain Current (A) 2.0
@I(D) (A) (Test Condition) 500m
I(DSS) Min. (A) 10u
I(GSS) Max. (A) 100n
Military Y
Mil Number JAN2N6660
Package TO-39
r(DS)on Max. (Ohms) 3.0
t(f) Max. (s) Fall time. 5.0n
t(r) Max. (s) Rise time 5.0n
V(BR)DSS (V) 60
V(BR)GSS (V) 30
@(VDS) (V) (Test Condition) 30
@V(DS) (V) (Test Condition) 25

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