N-Channel Enhancement MOSFET

From Defense Supply Center Columbus

Absolute Max. Power Diss. (W) 6.25
C(iss) Max. (F) 50p
g(fs) Max, (S) Trans. conduct, 195m
g(fs) Min. (S) Trans. conduct. 170m
I(D) Abs. Drain Current (A) 2.0
@I(D) (A) (Test Condition) 500m
I(DSS) Min. (A) 10u
I(GSS) Max. (A) 100n
Military Y
Mil Number JANTX2N6660
Package TO-39
r(DS)on Max. (Ohms) 3.0
t(f) Max. (s) Fall time. 5.0n
t(r) Max. (s) Rise time 5.0n
V(BR)DSS (V) 60
V(BR)GSS (V) 30
@(VDS) (V) (Test Condition) 30
@V(DS) (V) (Test Condition) 25

External links

There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.