2N6660+JANTXV
N-Channel Enhancement MOSFET

From Defense Supply Center Columbus

@(VDS) (V) (Test Condition)30
@I(D) (A) (Test Condition)500m
@V(DS) (V) (Test Condition)25
Absolute Max. Power Diss. (W)6.25
C(iss) Max. (F)50p
I(D) Abs. Drain Current (A)2.0
I(DSS) Min. (A)10u
I(GSS) Max. (A)100n
Mil NumberJANTXV2N6660
MilitaryY
PackageTO-39
V(BR)DSS (V)60
V(BR)GSS (V)30
g(fs) Max, (S) Trans. conduct,195m
g(fs) Min. (S) Trans. conduct.170m
r(DS)on Max. (Ohms)3.0
t(f) Max. (s) Fall time.5.0n
t(r) Max. (s) Rise time5.0n

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