2N6764+JAN
N-Channel Enhancement MOSFET

From Defense Supply Center Columbus

@(VDS) (V) (Test Condition)20
@Freq. (Hz) (Test Condition)1.0M
@I(D) (A) (Test Condition)24
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)150
C(iss) Max. (F)3.0n
I(D) Abs. Drain Current (A)38
I(D) Abs. Max.(A) Drain Curr.24
I(DSS) Max. (A)1.0m
I(GSS) Max. (A)100n
Mil NumberJAN2N6764
MilitaryY
PackageTO-3
V(BR)DSS (V)100
V(BR)GSS (V)20
V(GS)th Max. (V)2.0
V(GS)th Min. (V)4.0
g(fs) Max, (S) Trans. conduct,27
g(fs) Min. (S) Trans. conduct.9.0
r(DS)on Max. (Ohms)55m
t(d)off Max. (s) Off time125n
t(f) Max. (s) Fall time.100n
t(r) Max. (s) Rise time100n
td(on) Max (s) On time delay35n

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