{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 5mA, 10V","Transistor Type":"2 NPN - Pre-Biased (Dual)","Product Photos":"SOT-553-5","Family":"Transistors (BJT) - Arrays, Pre-Biased","Current - Collector Cutoff (Max)":"500nA","Series":"-","Vce Saturation (Max) @ Ib, Ic":"250mV @ 300\u00b5A, 10mA","Voltage - Collector Emitter Breakdown (Max)":"50V","Supplier Device Package":"SOT-553","Packaging":"Tape & Reel (TR)","Resistor ...

{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"100mA","PCN Design\/Specification":"Wire Bond 01\/Dec\/2010","Product Photos":"SOT-553-5","Package \/ Case":"SOT-553","DC Current Gain (hFE) (Min) @ Ic, Vce":"80 @ 5mA, 10V","Frequency - Transition":"-","PCN Assembly\/Origin":"Qualification Assembly\/Test Site 25\/Sep\/2014 Wafer Source Addition 26\/Nov\/2014","Voltage - Collector Emitter Breakdown (Max)":"50V","Datasheets":"EMG(2,5)DXV5T1","Resistor - Emitter Base (R2) (Ohms)":...