EPC2012 TRANS GAN 200V 3A BUMPED DIE
From EPC
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Datasheets | EPC2012 |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Logic Level Gate |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| Family | FETs - Single |
| Featured Product | eGaN™ FETs |
| Gate Charge (Qg) @ Vgs | 1.5nC @ 100V |
| Input Capacitance (Ciss) @ Vds | 128pF @ 100V |
| Mfg Application Notes | Second Generation eGaN® FETs Assembling eGaN® FETs Using eGaN® FETs |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | 917-1017-6 |
| PCN Assembly/Origin | EPC2yyy Family Process Change 14/Dec/2013 |
| PCN Design/Specification | EPC20xx Material 10/Apr/2013 |
| PCN Other | Multiple Changes 24/Jun/2014 |
| Package / Case | Die |
| Packaging | Digi-Reel® |
| Power - Max | - |
| Product Photos | EPC1012 |
| Product Training Modules | Paralleling eGaN® FETs |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 3A, 5V |
| Series | eGaN® |
| Standard Package | 1 |
| Supplier Device Package | Die |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Video File | EPC eGaN FETs -- Another Geek Moment | DigiKey |
