EPC2015 TRANS GAN 40V 33A BUMPED DIE
From EPC
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) |
| Datasheets | EPC2015 Datasheet |
| Drain to Source Voltage (Vdss) | 40V |
| FET Feature | Logic Level Gate |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| Family | FETs - Single |
| Featured Product | eGaN™ FETs Demo Board EPC9101 |
| For Use With | 917-1067-ND - BOARD DEV EPC2015/23 EGAN 917-1049-ND - DEV GAN 1/2 BRIDGE 2015 W/LM5113 |
| Gate Charge (Qg) @ Vgs | 10.5nC @ 5V |
| Input Capacitance (Ciss) @ Vds | 1100pF @ 20V |
| Mfg Application Notes | Second Generation eGaN® FETs Assembling eGaN® FETs Using eGaN® FETs |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | 917-1019-6 |
| PCN Assembly/Origin | EPC2yyy Family Process Change 12/Dec/2013 |
| PCN Design/Specification | EPC20xx Material 10/Apr/2013 |
| Package / Case | Die |
| Packaging | Digi-Reel® |
| Power - Max | - |
| Product Photos | EPC2015 |
| Product Training Modules | eGaN FET Reliability Second Gen Lead Free eGaN FETs Overview Paralleling eGaN® FETs Driving eGaN FETs with LM5113 |
| Rds On (Max) @ Id, Vgs | 4 mOhm @ 33A, 5V |
| Reference Design Library | EPC9107: 3.3V @ 15A, 9 ~ 28V in |
| Related Products | 732-3701-2-ND - FIXED IND 220NH 31A 0.325 MOHM 732-3701-1-ND - FIXED IND 220NH 31A 0.325 MOHM 732-3701-6-ND - FIXED IND 220NH 31A 0.325 MOHM |
| RoHS Information | Lead Free/RoHS Statement |
| Series | eGaN® |
| Standard Package | 1 |
| Supplier Device Package | Die Outline (11-Solder Bar) |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Video File | EPC eGaN FETs -- Another Geek Moment | DigiKey |
