{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"9.5A (Ta), 30A (Tc)","Gate Charge (Qg) @ Vgs":"9.4nC @ 5V","Product Photos":"TO-252-3","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"20 mOhm @ 9.5A, 10V","Datasheets":"FDD6612A, FDU6612A","FET Type":"MOSFET N-Channel, Metal Oxide","Stand...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"2.8(W)","Continuous Drain Current":"9.5(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...