{"Category":"Discrete Semiconductor Products","FET Feature":"Diode (Isolated)","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"8-SOIC (0.154\", 3.90mm Width)","Current - Continuous Drain (Id) @ 25\u00b0C":"3A (Ta)","Gate Charge (Qg) @ Vgs":"9.3nC @ 10V","Product Photos":"8-SOIC","PCN Design\/Specification":"Mold Compound 12\/Dec\/2007","Rds On (Max) @ Id, Vgs":"115 mOhm @ 3A, 10V","Datasheets":"FDFS2P753Z","FET Type":"MOSFET P-Channel, Metal Oxide","Standard Package":"2,500","Drain to Source Volta...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b125(V)","Channel Mode":"Enhancement","Power Dissipation":"1.6(W)","Continuous Drain Current":"3(A)","Mounting":"Surface Mount","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"SOIC","Operating Temp Range":"-55C to 150C","Type":"Power MOSFET","Pin Count":"8","Number of Elements":"1"}...