{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"3V @ 250\u00b5A","Package \/ Case":"TO-236-3, SC-59, SOT-23-3","Current - Continuous Drain (Id) @ 25\u00b0C":"1.25A (Ta)","Gate Charge (Qg) @ Vgs":"13.8nC @ 10V","Product Photos":"SOT-23-3","PCN Design\/Specification":"Wire Bonding 07\/Nov\/2008 Mold Compound 08\/April\/2008","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"170 mOhm @ 1.25A, 10V","Datasheets":...

{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"SUPERSOT-3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration"...

{"Status":"ACTIVE-UNCONFIRMED","Channel Type":"P-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"SUPERSOT-3","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Package Style":"SMALL OUTLINE","Transistor Application":"SWITCHING","Number of Elements":"1","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"DUAL","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE WITH BUILT-IN...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.5(W)","Continuous Drain Current":"1.25(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"SOT-23","Type":"Power MOSFET","Pin Count":"3","Number of Elements":"1"}...