{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"16A (Ta), 80A (Tc)","Gate Charge (Qg) @ Vgs":"95nC @ 10V","Product Photos":"TO-220-3","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"6 mOhm @ 80A, 10V","Datasheets":"FDB060AN08A0, FDP060AN08A0 TO220B03 Pkg Drawing","FET Type":"MOSFET N-Channel, Metal Oxide","PCN Packaging":"...

{"Polarity":"N","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"255(W)","Continuous Drain Current":"16(A)","Mounting":"Through Hole","Drain-Source On-Volt":"75(V)","Packaging":"Rail\/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-220","Operating Temp Range":"-55C to 175C","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...