{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-3P-3,TO-247-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"QFET\u00ae","Standard Package":"30","Supplier Device Package":"TO-3PN","Datasheets":"FQA47P06","Rds On (Max) @ Id, Vgs":"26 mOhm @ 27.5A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"214W","Package \/ Case":"TO-3P-3, SC-65-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"60V...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"820 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"55 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0260 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"220 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"820 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"55 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0260 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"220 A","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEM...

{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"820 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"55 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0260 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"220 A","Channel Type":"P-CHANNEL...

{"Terminal Finish":"GOLD","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"820 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"55 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0260 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"220 A","Channel Type":"P-CHANNEL","FET Technolo...