{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"7.5A (Tc)","Gate Charge (Qg) @ Vgs":"36nC @ 10V","Product Photos":"TO-263","PCN Design\/Specification":"Passivation Material 26\/June\/2007","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"1.2 Ohm @ 3.75A, 10V","Datasheets":"FQB8N60C, FQI...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1255pF @ 25V","Series":"QFET\u00ae","Standard Package":"1","Supplier Device Package":"TO-263 (D2Pak)","Datasheets":"FQB8N60C, FQI8N60C","Rds On (Max) @ Id, Vgs":"1.2 Ohm @ 3.75A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"3.13W","Package \/ Case":"TO-263-3, D\u00b2Pa...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"7.5(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"600(V)","Packaging":"Tape and Reel","Power Dissipation":"3.13(W)","Operating Temp Range":"-55C to 150C","Package Type":"D2PAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...