{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Package \/ Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"1.6A (Tc)","Gate Charge (Qg) @ Vgs":"15.5nC @ 10V","Product Photos":"TO-252-3","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"9 Ohm @ 800mA, 10V","Datasheets":"FQD2N100, FQU2N100 D-PAK Tape and Reel Data","FET Type":"MOSFET N-Channel, Metal Oxide...

{"Category":"MOSFET","Maximum Drain Source Voltage":"1000 V","Typical Rise Time":"30 ns","Typical Turn-Off Delay Time":"25 ns","Description":"Value","Maximum Continuous Drain Current":"1.6 A","Package":"3DPAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b130 V","Typical Turn-On Delay Time":"13 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"9000@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"35 ns"}...

{"Category":"MOSFET","Maximum Drain Source Voltage":"1000 V","Typical Rise Time":"30 ns","Typical Turn-Off Delay Time":"25 ns","Description":"Value","Maximum Continuous Drain Current":"1.6 A","Package":"3DPAK","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b130 V","Typical Turn-On Delay Time":"13 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"9000@10V mOhm","Manufacturer":"Fairchild Semiconductor","Typical Fall Time":"35 ns"}...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"1.6(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"1000(V)","Packaging":"Tape and Reel","Power Dissipation":"2.5(W)","Operating Temp Range":"-55C to 150C","Package Type":"DPAK","Type":"Power MOSFET","Pin Count":"2 +Tab","Number of Elements":"1"}...