{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"5V @ 250\u00b5A","Package \/ Case":"TO-220-3 Full Pack, Formed Leads","Current - Continuous Drain (Id) @ 25\u00b0C":"8A (Tc)","Gate Charge (Qg) @ Vgs":"45nC @ 10V","Product Photos":"FQPF8N80CYDTU","PCN Design\/Specification":"Passivation Material 26\/June\/2007","Product Training Modules":"High Voltage Switches for Power Processing","Rds On (Max) @ Id, Vgs":"1.55 Ohm @ 4A, 10V","Datasheets":"FQP8N80C, FQPF8N80C","FE...

{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b130(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"8(A)","Mounting":"Through Hole","Drain-Source On-Volt":"800(V)","Packaging":"Rail\/Tube","Power Dissipation":"59(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-220F","Rad Hardened":"No","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...