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2N7000D11Z 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
From Fairchild Semiconductor Corporation
Status | ACTIVE-UNCONFIRMED |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
Drain Current-Max (ID) | 0.2000 A |
Drain-source On Resistance-Max | 5 ohm |
DS Breakdown Voltage-Min | 60 V |
Feedback Cap-Max (Crss) | 5 pF |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | ROUND |
Package Style | CYLINDRICAL |
Power Dissipation Ambient-Max | 0.4000 W |
Terminal Form | THROUGH-HOLE |
Terminal Position | BOTTOM |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE SMALL SIGNAL |