2N7000D11Z
200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

From Fairchild Semiconductor Corporation

StatusACTIVE-UNCONFIRMED
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.2000 A
Drain-source On Resistance-Max5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)5 pF
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeROUND
Package StyleCYLINDRICAL
Power Dissipation Ambient-Max0.4000 W
Terminal FormTHROUGH-HOLE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

External links