2N7000J59Z
200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Fairchild Semiconductor Corporation

Status ACTIVE-UNCONFIRMED
Channel Type N-CHANNEL
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 0.2000 A
Drain-source On Resistance-Max 5 ohm
DS Breakdown Voltage-Min 60 V
Feedback Cap-Max (Crss) 5 pF
FET Technology METAL-OXIDE SEMICONDUCTOR
Mfr Package Description TO-92, 3 PIN
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Power Dissipation Ambient-Max 0.4000 W
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transistor Type GENERAL PURPOSE SMALL SIGNAL

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