FDA16N50_F109 MOSFET N-CH 500V 16.5A TO-3P
From Fairchild Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
| Datasheets | FDA16N50(_F109) |
| Drain to Source Voltage (Vdss) | 500V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 45nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 1945pF @ 25V |
| Mounting Type | Through Hole |
| PCN Assembly/Origin | Assembly Site Transfer 06/Apr/2015 |
| PCN Design/Specification | Heat Sink Drawing Update 11/Feb/2014 |
| Package / Case | TO-3P-3, SC-65-3 |
| Packaging | Tube |
| Power - Max | 205W |
| Product Photos | TO-3P-3,TO-247-3 |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 8.3A, 10V |
| Series | UniFET™ |
| Standard Package | 30 |
| Supplier Device Package | TO-3PN |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
