FDC2612D87Z
1100 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Fairchild Semiconductor Corporation

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)1.1 A
Drain-source On Resistance-Max0.7250 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionSUPERSOT-6
Number of Elements1
Number of Terminals6
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

External links