FDC6561AN
MOSFET 2N-CH 30V 2.5A SSOT6

From Fairchild Semiconductor

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C2.5A
DatasheetsFDC6561AN
Drain to Source Voltage (Vdss)30V
FET FeatureLogic Level Gate
FET Type2 N-Channel (Dual)
FamilyFETs - Arrays
Gate Charge (Qg) @ Vgs3.2nC @ 5V
Input Capacitance (Ciss) @ Vds220pF @ 15V
Mounting TypeSurface Mount
Online CatalogN-Channel Logic Level Gate FETs
Other NamesFDC6561ANDKR
PCN Design/SpecificationMold Compound 08/April/2008
PCN PackagingBinary Year Code Marking 15/Jan/2014
Package / CaseSOT-23-6 Thin, TSOT-23-6
PackagingDigi-Reel®
Power - Max700mW
Product PhotosFDC6561AN SuperSOT-6 PKG
Product Training ModulesHigh Voltage Switches for Power Processing
Rds On (Max) @ Id, Vgs95 mOhm @ 2.5A, 10V
SeriesPowerTrench®
Standard Package1
Supplier Device Package6-SSOT
Vgs(th) (Max) @ Id3V @ 250µA

External links