FQB8N25TM_NL 8 A, 250 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From Fairchild Semiconductor Corporation
Status | ACTIVE-UNCONFIRMED |
Avalanche Energy Rating (Eas) | 120 mJ |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 250 V |
Drain Current-Max (ID) | 8 A |
Drain-source On Resistance-Max | 0.5500 ohm |
EU RoHS Compliant | Yes |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Lead Free | Yes |
Mfr Package Description | D2PAK-3 |
Number of Elements | 1 |
Number of Terminals | 2 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 32 A |
Surface Mount | Yes |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |