FQD2N60CTM MOSFET N-CH 600V 1.9A DPAK
From Fairchild Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Datasheets | FQD2N60C, FQU2N60C D-PAK Tape and Reel Data |
| Drain to Source Voltage (Vdss) | 600V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 235pF @ 25V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | FQD2N60CTMDKR |
| PCN Design/Specification | Passivation Material 14/May/2008 |
| PCN Packaging | Tape and Box/Reel Barcode Update 07/Aug/2014 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Digi-Reel® |
| Power - Max | 2.5W |
| Product Photos | TO-252-3 |
| Product Training Modules | High Voltage Switches for Power Processing |
| Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 950mA, 10V |
| Series | QFET® |
| Standard Package | 1 |
| Supplier Device Package | TO-252-3 |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
