FQD2N60CTM_WS MOSFET N-CH 600V 1.9A
From Fairchild Semiconductor
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
Datasheets | FQD2N60C, FQU2N60C |
Drain to Source Voltage (Vdss) | 600V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) @ Vds | 235pF @ 25V |
Mounting Type | Surface Mount |
Other Names | FQD2N60CTM_WSDKR |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Packaging | Digi-Reel® |
Power - Max | 2.5W |
Product Photos | TO-252-3 QFET Series |
Rds On (Max) @ Id, Vgs | 4.7 Ohm @ 950mA, 10V |
Series | QFET® |
Standard Package | 1 |
Supplier Device Package | D-Pak |
Vgs(th) (Max) @ Id | 4V @ 250µA |