FQD5N60CTM MOSFET N-CH 600V 2.8A DPAK
From Fairchild Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Datasheets | FQD5N60C, FQU5N60C |
| Drain to Source Voltage (Vdss) | 600V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 670pF @ 25V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | FQD5N60CTM-ND FQD5N60CTMTR |
| PCN Design/Specification | Passivation Material 26/June/2007 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 2.5W |
| Product Photos | TO-252-3 |
| Product Training Modules | High Voltage Switches for Power Processing |
| Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 1.4A, 10V |
| Series | QFET® |
| Standard Package | 2,500 |
| Supplier Device Package | D-Pak |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
