NDT456PJ23Z
7.5 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET

From Fairchild Semiconductor Corporation

Status DISCONTINUED
Case Connection DRAIN
Channel Type P-CHANNEL
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 7.5 A
Drain-source On Resistance-Max 0.0300 ohm
DS Breakdown Voltage-Min 30 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Pulsed Drain Current-Max (IDM) 20 A
Surface Mount Yes
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transistor Type GENERAL PURPOSE POWER

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