NDT456PJ23ZD84Z
7.5 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET

From Fairchild Semiconductor Corporation

StatusACTIVE-UNCONFIRMED
Case ConnectionDRAIN
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min30 V
Drain Current-Max (ID)7.5 A
Drain-source On Resistance-Max0.0300 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)20 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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