FDA16N50_F109
MOSFET N-CH 500V 16.5A TO-3P

From Fairchild Semiconductor

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C16.5A (Tc)
DatasheetsFDA16N50(_F109)
Drain to Source Voltage (Vdss)500V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs45nC @ 10V
Input Capacitance (Ciss) @ Vds1945pF @ 25V
Mounting TypeThrough Hole
PCN Assembly/OriginAssembly Site Transfer 06/Apr/2015
PCN Design/SpecificationHeat Sink Drawing Update 11/Feb/2014
Package / CaseTO-3P-3, SC-65-3
PackagingTube
Power - Max205W
Product PhotosTO-3P-3,TO-247-3
Rds On (Max) @ Id, Vgs380 mOhm @ 8.3A, 10V
SeriesUniFET™
Standard Package30
Supplier Device PackageTO-3PN
Vgs(th) (Max) @ Id5V @ 250µA

External links