FDC6561AN MOSFET 2N-CH 30V 2.5A SSOT6
From Fairchild Semiconductor
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 2.5A |
Datasheets | FDC6561AN |
Drain to Source Voltage (Vdss) | 30V |
FET Feature | Logic Level Gate |
FET Type | 2 N-Channel (Dual) |
Family | FETs - Arrays |
Gate Charge (Qg) @ Vgs | 3.2nC @ 5V |
Input Capacitance (Ciss) @ Vds | 220pF @ 15V |
Mounting Type | Surface Mount |
Online Catalog | N-Channel Logic Level Gate FETs |
Other Names | FDC6561ANDKR |
PCN Design/Specification | Mold Compound 08/April/2008 |
PCN Packaging | Binary Year Code Marking 15/Jan/2014 |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Packaging | Digi-Reel® |
Power - Max | 700mW |
Product Photos | FDC6561AN SuperSOT-6 PKG |
Product Training Modules | High Voltage Switches for Power Processing |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 2.5A, 10V |
Series | PowerTrench® |
Standard Package | 1 |
Supplier Device Package | 6-SSOT |
Vgs(th) (Max) @ Id | 3V @ 250µA |