2N7008RLRA
N-Channel Enhancement MOSFET

From Motorola

@(VDS) (V) (Test Condition)40
@I(D) (A) (Test Condition)200m
@V(DS) (V) (Test Condition)2.0
Absolute Max. Power Diss. (W)400m
C(iss) Max. (F)50p
I(D) Abs. Drain Current (A)150m
I(DSS) Min. (A)500u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-226AA
V(BR)DSS (V)60
V(BR)GSS (V)40
g(fs) Min. (S) Trans. conduct.80u
r(DS)on Max. (Ohms)7.5

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