MD2219AFHX
NPN Multi-Chip Composite Transistor Pair

From Motorola

@I(C) (A) (Test Condition)1.0m
@V(CBO) (V) (Test Condition)60
@V(CE) (V) (Test Condition)10
Emitter-Base Diode (Y/N)No
I(C) Abs.(A) Collector Current800m
I(CBO) Max. (A)10n
MilitaryN
Number of Devices2
P(D) Max.(W) Power Dissipation400m
PackageFP
Semiconductor MaterialSilicon
Type (NPN/PNP)NPN
V(BR)CBO (V)75
V(BR)CEO (V)50
h(FE) Max. Current gain.325
h(FE) Min. Static Current Gain75

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