MJ10016HX
NPN Darlington Transistor

From Motorola

@I(B) (A) (Test Condition)10
@I(C) (A) (Test Condition)50
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)250
I(C) Abs.(A) Collector Current50
I(CBO) Max. (A)250u
MilitaryN
PackageTO-204AE
Semiconductor MaterialSilicon
V(BR)CEO (V)500
V(CE)sat Max.(V)5.0
h(FE) Min. Static Current Gain25
t(d) Max. (s) Delay time.300n
t(f) Max. (s) Fall time.1.0u
t(r) Max. (s) Rise time1.0u
t(s) Max. (s) Storage time.2.5u

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