MMBF0201NLT3 N-Channel Enhancement MOSFET
From Motorola
| @(VDS) (V) (Test Condition) | 20 |
| @I(D) (A) (Test Condition) | 220m |
| @Pulse Width (s) (Condition) | 10u |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 5.0 |
| @V(GS) (V) (Test Condition) | 4.5 |
| Absolute Max. Power Diss. (W) | 225m |
| C(iss) Max. (F) | 45p |
| I(D) Abs. Drain Current (A) | 300m |
| I(D) Abs. Max.(A) Drain Curr. | 240m |
| I(DM) Max (A)(@25°C) | 750m |
| I(DSS) Max. (A) | 1.0u |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | TO-236AB |
| Thermal Resistance Junc-Amb. | 556 |
| V(BR)DSS (V) | 20 |
| V(BR)GSS (V) | 20 |
| V(GS)th Max. (V) | 2.4 |
| V(GS)th Min. (V) | 1.0 |
| g(fs) Max, (S) Trans. conduct, | 450m |
| r(DS)on Max. (Ohms) | 1.4 |
| t(d)off Max. (s) Off time | 15n |
| t(f) Max. (s) Fall time. | 800p |
| t(r) Max. (s) Rise time | 2.5n |
| td(on) Max (s) On time delay | 2.5n |
