2SK3529-01 MOSFET, Power; N-Ch; VDSS 800V; RDS(ON) 1.46 Ohms; ID +/-7A; TO-220AB; PD 195W; VGS +/-
From Fuji Semiconductor
Category | Power MOSFET |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Dimensions | 10 x 4.5 x 15 mm |
Forward Diode Voltage | 1.5 V |
Forward Transconductance | 8.2 S |
Height | 15 mm |
Length | 10 mm |
Maximum Continuous Drain Current | ±7 A |
Maximum Drain Source Resistance | 1.9 Ω |
Maximum Drain Source Voltage | 800 V |
Maximum Gate Source Voltage | ±30 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 195 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Through Hole |
Number of Elements per Chip | 1 |
Operating Temperature Range | -55 to +150 °C |
Package Type | TO-220AB |
Pin Count | 3 |
Typical Gate Charge @ Vgs | 21.5 nC @ 10 V |
Typical Input Capacitance @ Vds | 740 pF @ 25 V |
Typical Turn On Delay Time | 21 ns |
Typical TurnOff Delay Time | 40 ns |
Width | 4.5 mm |