2MBI100S-120-50
IGBT Array & Module Transistor, Dual Pack, N Channel, 150 A, 2.6 V, 780 W, 1.2 kV, Module

From FUJI ELECTRIC

Collector Emitter Voltage V(br)ceo:1.2 kV
Collector Emitter Voltage Vces:2.6 V
DC Collector Current:150 A
No. of Pins:7
Operating Temperature Max:150 °C
Power Dissipation Pd:780 W
SVHC:To Be Advised
Transistor Case Style:Module
Transistor Polarity:N Channel

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