2MBI100TA-060-50
IGBT Array & Module Transistor, N Channel, 100 A, 2.4 V, 310 W, 600 V, Module

From FUJI ELECTRIC

Collector Emitter Voltage V(br)ceo:600 V
Collector Emitter Voltage Vces:2.4 V
DC Collector Current:100 A
No. of Pins:7
Operating Temperature Max:150 °C
Power Dissipation Pd:310 W
SVHC:To Be Advised
Transistor Case Style:Module
Transistor Polarity:N Channel

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