2SK3588-01S
73 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET

From Fuji Electric Corp. of America

StatusACTIVE
Avalanche Energy Rating (Eas)319 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)73 A
Drain-source On Resistance-Max0.0250 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTPACK-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max2.02 W
Pulsed Drain Current-Max (IDM)292 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links