2SK3603-01MR
23 A, 150 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From Fuji Electric Corp. of America

StatusACTIVE
Avalanche Energy Rating (Eas)131 mJ
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min150 V
Drain Current-Max (ID)23 A
Drain-source On Resistance-Max0.1050 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-220F, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Power Dissipation Ambient-Max2.16 W
Pulsed Drain Current-Max (IDM)92 A
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links