2SK3684-01SJ
19 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET

From Fuji Electric Corp. of America

StatusACTIVE
Avalanche Energy Rating (Eas)245 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)19 A
Drain-source On Resistance-Max0.3800 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max1.67 W
Pulsed Drain Current-Max (IDM)76 A
Surface MountYes
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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