FHX35X/002
Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET

From Fujitsu Semiconductor

StatusTRANSFERRED
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min6 V
FET TechnologyHIGH ELECTRON MOBILITY
Mfr Package DescriptionDIE
Number of Elements1
Operating ModeDEPLETION
Package Body MaterialUNSPECIFIED
Package ShapeUNSPECIFIED
Package StyleUNCASED CHIP
Power Dissipation Ambient-Max0.2900 W
Surface MountYes
Terminal FormNO LEAD
Terminal PositionUPPER
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor TypeRF SMALL SIGNAL

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