GS66508T-E02-TY MOSFET Top cooled 650V GaN Transistor
From GaN Systems
Brand | GaN Systems |
Channel Mode | Enhancement |
Configuration | Single |
Id - Continuous Drain Current | 30 A |
Manufacturer | GaN Systems |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | SMD/SMT |
Packaging | Tray |
Product Category | MOSFET |
Qg - Gate Charge | 6.5 nC |
Rds On - Drain-Source Resistance | 55 mOhms |
RoHS | Details |
Technology | GaN |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Vgs - Gate-Source Breakdown Voltage | 10 V |
Vgs th - Gate-Source Threshold Voltage | 1.6 V |