{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"35A","Switching Energy":"850\u00b5J (on), 800\u00b5J (off)","Vce(on) (Max) @ Vge, Ic":"2.7V @ 15V, 10A","PCN Design\/Specification":"Plating Material 20\/Dec\/2007","Td (on\/off) @ 25\u00b0C":"23ns\/165ns","Input Type":"Standard","Package \/ Case":"TO-247-3","Gate Charge":"100nC","Product Photos":"TO-247-3","PCN Assembly\/Origin":"Assembly Site Transfer 06\/Apr\/2015","Voltage - Collector Emitter Breakdown (Max)":"1200V","Produc...

{"Collector Current (DC) ":"35(A)","Operating Temperature (Min)":"-55C","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"'\u00b120(V)","Channel Type":"N","Packaging":"Rail\/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-247","Configuration":"Single","Pin Count":"3 +Tab"}...