{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"72A","Switching Energy":"2.2mJ (on), 2.3mJ (off)","Vce(on) (Max) @ Vge, Ic":"2.7V @ 15V, 27A","Voltage - Collector Emitter Breakdown (Max)":"1200V","Td (on\/off) @ 25\u00b0C":"24ns\/195ns","Input Type":"Standard","Package \/ Case":"TO-247-3","Gate Charge":"270nC","Product Photos":"TO-247-3","PCN Design\/Specification":"Plating Material 20\/Dec\/2007","Reverse Recovery Time (trr)":"-","Datasheets":"HGTG27N120BN, HGT5A27N120BN","S...

{"Collector Current (DC) ":"72(A)","Operating Temperature (Min)":"-55C","Mounting":"Through Hole","Operating Temperature (Max)":"150C","Gate to Emitter Voltage (Max)":"\u00b120(V)","Channel Type":"N","Packaging":"Rail\/Tube","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"TO-247","Configuration":"Single","Pin Count":"3 +Tab"}...