HGT1S12N60C3RS
N-Channel IGBT

From Harris Semiconductor

@I(C) (A) (Test Condition)12
@V(GE) (Test Condition)15
Absolute Max. Power Diss. (W)104
I(C) Abs.(A) Collector Current24
I(CES) Max. (A)250u
I(GES) Max. (A)100n
PackageTO-263AB
V(BR)CES (V)600
V(BR)GES (V)20
V(CE)sat Max.(V)2.2
V(GE)th Max. (V)7.5
t(d)off Max. (s) Off time500n
t(f) Max. (s) Fall time.400n
t(r) Max. (s) Rise time38n
td(on) Max (s) On time delay36n

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