2SC1061B
Si NPN Power BJT

From Hitachi Semiconductor

StatusDiscontinued
@I(C) (A) (Test Condition)1.0
@V(CE) (V) (Test Condition)4.0
Absolute Max. Power Diss. (W)25
I(C) Abs.(A) Collector Current3.0
I(CBO) Max. (A)100u
MilitaryN
PackageTO-220AB
V(BR)CBO (V)50
V(BR)CEO (V)50
f(T) Min. (Hz) Transition Freq8.0M
h(FE) Max. Current gain.120
h(FE) Min. Static Current Gain60

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