2SD667AB
Si NPN Lo-Pwr BJT

From Hitachi Semiconductor

StatusDiscontinued
@I(C) (A) (Test Condition)150m
@V(CE) (V) (Test Condition)5
Absolute Max. Power Diss. (W)900m
C(obo) (Max) (F)12p
I(C) Abs.(A) Collector Current1
I(CBO) Max. (A)10u
MilitaryN
PackageTO-92var
V(BR)CBO (V)120
V(BR)CEO (V)100
f(T) Min. (Hz) Transition Freq140M
h(FE) Min. Static Current Gain60

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