2SK259H N-Channel Enhancement MOSFET - IDR(Diode) 5A
From Hitachi Semiconductor
| @(VDS) (V) (Test Condition) | 20 |
| @I(D) (A) (Test Condition) | 3.0 |
| @V(DS) (V) (Test Condition) | 20 |
| Absolute Max. Power Diss. (W) | 125 |
| C(iss) Max. (F) | 800p |
| I(D) Abs. Drain Current (A) | 5.0 |
| I(DSS) Min. (A) | 1.0m |
| Military | N |
| Package | TO-3 |
| V(BR)DSS (V) | 350 |
| V(BR)GSS (V) | 20 |
| g(fs) Max, (S) Trans. conduct, | 1.0 |
| g(fs) Min. (S) Trans. conduct. | 600m |
| r(DS)on Max. (Ohms) | 3.0 |
