2SK683 N-Channel Enhancement MOSFET
From Hitachi Semiconductor
| @(VDS) (V) (Test Condition) | 20 |
| @I(D) (A) (Test Condition) | 6 |
| @V(DS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 100 |
| C(iss) Max. (F) | 2.05n |
| I(D) Abs. Drain Current (A) | 12 |
| I(DSS) Min. (A) | 250u |
| I(GSS) Max. (A) | 10u |
| Military | N |
| Package | TO-218var |
| V(BR)DSS (V) | 500 |
| V(BR)GSS (V) | 20 |
| g(fs) Max, (S) Trans. conduct, | 10 |
| g(fs) Min. (S) Trans. conduct. | 6.0 |
| r(DS)on Max. (Ohms) | 600m |
| t(f) Max. (s) Fall time. | 85n |
| t(r) Max. (s) Rise time | 85n |
