2SK973L N-Channel Enhancement MOSFET - IDR(Diode) 2A
From Hitachi Semiconductor
@(VDS) (V) (Test Condition) | 20 |
@I(D) (A) (Test Condition) | 1.0 |
@V(DS) (V) (Test Condition) | 10 |
Absolute Max. Power Diss. (W) | 10 |
C(iss) Max. (F) | 240p |
I(D) Abs. Drain Current (A) | 2.0 |
I(DSS) Min. (A) | 100u |
I(GSS) Max. (A) | 10u |
Military | N |
Package | TO-252AA |
V(BR)DSS (V) | 60 |
V(BR)GSS (V) | 20 |
g(fs) Max, (S) Trans. conduct, | 2.0 |
g(fs) Min. (S) Trans. conduct. | 1.2 |
r(DS)on Max. (Ohms) | 0.5 |
t(f) Max. (s) Fall time. | 40n |
t(r) Max. (s) Rise time | 15n |